10.0 to 21.0

10.0 to 21.0
Part # XB1008-BD
Key features

Excellent Transmit LO/Output Buffer Stage
Compact Size
18.0 dB Small Signal Gain
+20.0 dBm P1dB Compression Point
5.5 dB Noise Figure
Variable Gain with Adjustable Bias
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883 Method 2010


Mimix Broadband’s two stage 4.0-11.0 GHz GaAs 
MMIC buffer amplifier has a small signal gain of 23.0 
dB with a +20.0 dBm P1dB output compression point. 
The device also provides variable gain regulation with 
adjustable bias. This MMIC uses Mimix Broadband’s 
0.15 µm GaAs PHEMT device model technology, and is 
based upon electron beam lithography to ensure 
high repeatability and uniformity. The chip has 
surface passivation to protect and provide a rugged 
part with backside via holes and gold metallization to 
allow either a conductive epoxy or eutectic solder die 
attach process. 

Frequency (GHz) 10.0-21.0
Gain (dB) 18.0
Gain Flatness (dB) +/-2.0
Noise Figure (dB) 5.5
Output IP3 (dBm) +20.0
OIP3 (dBm) +30.0
Bias (mA @ V) 100 @ 4.0
Package () DIE
Markets () S / P / D
Typical Applications

This device is well suited for 
Microwave and Millimeter-wave Point-to-Point Radio, 
LMDS, SATCOM and VSAT applications.