16.0 to 30.0

16.0 to 30.0
Part # XB1004-BD
Key features

High Dynamic Range
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
21.0 dB Small Signal Gain
2.2 dB Noise Figure at Low Noise Bias
+19.0 dBm P1dB Compression Point at Power Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010

Description

Mimix Broadband’s three stage 16.0-30.0 GHz GaAs 
MMIC buffer amplifier has a small signal gain of 21.0 dB 
with a noise figure of 2.2 dB across the band. This MMIC 
uses Mimix Broadband’s GaAs PHEMT device model 
technology, and is based upon electron beam 
lithography to ensure high repeatability and uniformity. 
The chip has surface passivation to protect and provide 
a rugged part with backside via holes and gold 
metallization to allow either a conductive epoxy or 
eutectic solder die attach process. This device is well 
suited for Millimeter-wave Point-to-Point Radio, LMDS, 
SATCOM and VSAT applications.

Specification
Frequency (GHz) 16.0-30.0
Gain (dB) 20.0
Gain Flatness (dB) +/-1.0
Noise Figure (dB) 2.2
Output IP3 (dBm) +14.0
OIP3 (dBm) +24.0
Bias (mA @ V) 90 @ 4.0
Package () DIE
Markets () P
Typical Applications

This device is well 
suited for Millimeter-wave Point-to-Point Radio, LMDS, 
SATCOM and VSAT application