16.0 to 30.0

16.0 to 30.0
Part # XB1004-BD
Key features

High Dynamic Range
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
21.0 dB Small Signal Gain
2.2 dB Noise Figure at Low Noise Bias
+19.0 dBm P1dB Compression Point at Power Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010


Mimix Broadband’s three stage 16.0-30.0 GHz GaAs 
MMIC buffer amplifier has a small signal gain of 21.0 dB 
with a noise figure of 2.2 dB across the band. This MMIC 
uses Mimix Broadband’s 0.15 µm GaAs PHEMT device 
model technology, and is based upon electron beam 
lithography to ensure high repeatability and 
uniformity. The chip has surface passivation to protect 
and provide a rugged part with backside via holes and 
gold metallization to allow either a conductive epoxy 
or eutectic solder die attach process.

Frequency (GHz) 16.0-30.0
Gain (dB) 20.0 / 21.0
Gain Flatness (dB) +/-1.0
Noise Figure (dB) 2.2 / 3.2
Output IP3 (dBm) +14.0 / +19.0
OIP3 (dBm) +24.0 / +29.0
Bias (mA @ V) 90 @ 4.0 / 180 @ 6.0
Package () DIE
Markets () P
Typical Applications

 This device is well 
suited for Millimeter-wave Point-to-Point Radio, LMDS, 
SATCOM and VSAT applications.