18.0 to 38.0

18.0 to 38.0
Part # XB1006-BD
Key features

High Dynamic Range/Positive Gain Slope
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
21.0 dB Small Signal Gain
3.2 dB Noise Figure at Low Noise Bias
+15 dBm P1dB Compression Point at Power Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010

Description

Mimix Broadband’s three stage 18.0-38.0 GHz GaAs 
MMIC buffer amplifier has a small signal gain of 21.0 dB 
with a positive gain slope, and a noise figure of 3.2 dB 
across the band. This MMIC uses Mimix Broadband’s 
0.15 µm GaAs PHEMT device model technology, and is 
based upon electron beam lithography to ensure high 
repeatability and uniformity. The chip has surface 
passivation to protect and provide a rugged part with 
backside via holes and gold metallization to allow 
either a conductive epoxy or eutectic solder die attach 
process. 

Specification
Frequency (GHz) 18.0-38.0
Gain (dB) 21.0
Gain Flatness (dB) +/-2.0
Noise Figure (dB) 3.2 / 4.5
Output IP3 (dBm) +9.0 / +15.0
OIP3 (dBm) +19.0 / +25.0
Bias (mA @ V) 50 @ 3.5 / 100 @ 5.5
Package () DIE
Markets () P / D
Typical Applications

This device is well suited for Millimeter-wave 
Point-to-Point Radio, LMDS, SATCOM and VSAT 
applications.