18.0 to 50.0

Mimix Broadband’s 18.0-50.0 GHz GaAs MMIC 
distributed amplifier has a small signal gain of 17.0 dB 
with a noise figure of 5.0 dB across the band. The 
device also includes 30.0 dB gain control and a +15 
dBm P1dB compression point. This MMIC uses Mimix 
Broadband’s 0.15 µm GaAs PHEMT device model 
technology, and is based upon electron beam 
lithography to ensure high repeatability and uniformity. 
The chip has surface passivation to protect and provide 
a rugged part with backside via holes and gold 
metallization to allow either a conductive epoxy or 
eutectic solder die attach process. 

This device is well 
suited for microwave, millimeter-wave, wideband 
military, and fiber optic applications.