2.0 to 18.0

Mimix Broadband’s 2.0-18.0 GHz GaAs MMIC 
distributed low noise amplifier has a small signal gain 
of 9.0 dB with a noise figure of 4.5 dB across the band. 
This MMIC uses Mimix Broadband’s 0.3 µm GaAs 
PHEMT device model technology, and is based upon 
optical beam lithography to ensure high repeatability 
and uniformity. The chip has surface passivation to 
protect and provide a rugged part with backside via 
holes and gold metallization to allow either a 
conductive epoxy or eutectic solder die attach process. 
 

This device is well suited for fiber optic, microwave 
radio, military, space, telecom infrastructure, test 
instrumentation and VSAT applications.