2.0 to 18.0

Mimix Broadband’s 2.0-18.0 GHz GaAs MMIC 
distributed low noise amplifier has a small signal gain 
of 8.5 dB with a noise figure of 4.5 dB across the band. 
This MMIC uses Mimix Broadband’s GaAs PHEMT device 
model technology, and is based upon optical beam 
lithography to ensure high repeatability and uniformity. 
The chip has surface passivation to protect and provide 
a rugged part with backside via holes and gold 
metallization to allow either a conductive epoxy or 
eutectic solder die attach process.

 This device is well 
suited for fiber optic, microwave radio, military, space, 
telecom infrastructure, test instrumentation and VSAT 
applications.