2.0 to 22.0

Mimix Broadband’s distributed 2.0-22.0 GHz GaAs 
MMIC power amplifier has a small signal gain of 11.0 
dB with a +24.0 dBm P1dB output compression point. 
This MMIC uses Mimix Broadband’s GaAs PHEMT 
device model technology, and is based upon electron 
beam lithography to ensure high repeatability and 
uniformity. The chip has surface passivation to protect 
and provide a rugged part with backside via holes 
and gold metallization to allow either a conductive 
epoxy or eutectic solder die attach process.

 This 
device is well suited for Test Instrumentation, Military, 
Space, Microwave Point-to-Point Radio, SATCOM and 
VSAT applications.