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20.0-40.0

20.0-40.0
Datasheet
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Part # XL1000-BD
Preview
Key features

Self Bias Architecture
Small Size
3.0 or 5.0 V Operation
20.0 dB Small Signal Gain
2.0 dB Noise Figure
+9.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010

Description

Mimix Broadband’s three stage 20.0-40.0 GHz GaAs 
MMIC low noise amplifier has a small signal gain of 20.0 
dB with a noise figure of 2.0 dB across the band. This 
MMIC uses Mimix Broadband’s GaAs PHEMT device 
model technology, and is based upon electron beam 
lithography to ensure high repeatability and uniformity. 
The chip has surface passivation to protect and provide 
a rugged part with backside via holes and gold 
metallization to allow either a conductive epoxy or 
eutectic solder die attach process. 

Specification
Frequency (GHz) 20.0-40.0
Gain (dB) 20.0
Gain Flatness (dB) +/-4.0
Noise Figure (dB) 2.0
Output IP3 (dBm) +9.0
OIP3 (dBm) +16.0
Bias (mA @ V) 35 @ 3.0 / 50 @ 5.0
Package () DIE
Markets () S / P / D
Typical Applications

This device is well 
suited for Millimeter-wave Point-to-Point Radio, LMDS, 
SATCOM and VSAT applications.