Part # XB1005-BD
Key features

High Dynamic Range
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
23.0 dB Small Signal Gain
2.7 dB Noise Figure at Low Noise Bias
+16 dBm P1dB Compression at Power Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010


Mimix Broadband’s three stage 35.0-45.0 GHz GaAs 
MMIC buffer amplifier has a small signal gain of 23.0 
dB with a noise figure of 2.7 dB across the band. This 
MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT 
device model technology, and is based upon electron 
beam lithography to ensure high repeatability and 
uniformity. The chip has surface passivation to protect 
and provide a rugged part with backside via holes 
and gold metallization to allow either a conductive 
epoxy or eutectic solder die attach process. 

Frequency (GHz) 35.0-45.0
Gain (dB) 19.0
Gain Flatness (dB) +/-1.0
Noise Figure (dB) 22.7
Output IP3 (dBm) +13.0
OIP3 (dBm) +23.0
Bias (mA @ V) 50 @ 3.5
Package () DIE
Markets () P / D
Typical Applications

device is well suited for Millimeter-wave 
Point-to-Point Radio, SATCOM and VSAT applications.