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DC to 10.0

DC to 10.0
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Part # CFP0103-SP
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Key features

Matched Pair of Transistors for Optimum
Balanced Amplifier Design
AlGaAs/InGaAs/AlGaAs Pseudomorphic High
Electron Mobility Transistor (pHEMT)
High Gain:
 25 dB @ 900 MHz
 21 dB @ 1900 MHz
Low Noise Figure:
 0.6 dB @ 900 MHz
 0.7 dB @ 1900 MHz
17 dBm P1dB at 2 GHz
33 dBm OIP3 at 2 GHz
600µm Gate Width: 50 Output Impedance
Excellent Uniformity
Ultra Compact Surface-Mount QFN Package
10 Year MTBF Lifetime
RoHS-Compliant Construction

Description

Low Noise Amplifiers and Oscillators Operating
over the RF and Microwave Frequency Ranges
Cellular/PCS/GSM/W-CDMA
Mobile Handsets, Base Station Receivers and
Tower-Mount Amplifiers
WiMAX WLAN, LEO, GEO, WLL/RLL, GPS and
MMDS Applications
General Purpose Discrete pHEMT for Other Ultra
Low-Noise and Medium Power Applications

Specification
Frequency (GHz) DC-10.0
Gain (dB) 22.0
Noise Figure (dB) 0.5
Output IP3 (dBm) +17.0
OIP3 (dBm) +29.0
Bias (mA @ V) 40 @ 3.0
Package () -SP (SOT-86)
Markets () I / D
Typical Applications

Low Noise Amplifiers and Oscillators Operating
over the RF and Microwave Frequency Ranges
Cellular/PCS/GSM/W-CDMA
Mobile Handsets, Base Station Receivers and
Tower-Mount Amplifiers
WiMAX WLAN, LEO, GEO, WLL/RLL, GPS and
MMDS Applications
General Purpose Discrete pHEMT for Other Ultra
Low-Noise and Medium Power Applications