Mimix Broadband’s distributed 30 kHz-30 GHz GaAs MMIC distributed amplifier has a small signal gain of
12.0 dB with a +16.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s GaAs
PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to alloweither a conductive epoxy or eutectic solder die attach process. This device is well suited for Test Instrumentation, Military, Space, Microwave Point-to-Point Radio, SATCOM and VSAT applications.
